Gawo la SiC
Kufotokozera
Silicon carbide (SiC) ndi gulu la binary la Gulu IV-IV, ndilokhalo lokhazikika lokhazikika mu Gulu IV la Periodic Table, Ndilo semiconductor yofunikira.SiC ili ndi matenthedwe abwino kwambiri, makina, mankhwala ndi magetsi, zomwe zimapangitsa kuti ikhale imodzi mwazinthu zabwino kwambiri zopangira zida zamagetsi zotentha kwambiri, zothamanga kwambiri komanso zamphamvu kwambiri, SiC ingagwiritsidwenso ntchito ngati gawo laling'ono. kwa ma diode otulutsa buluu opangidwa ndi GaN.Pakadali pano, 4H-SiC ndiye zinthu zazikuluzikulu pamsika, ndipo mtundu wa conductivity umagawidwa m'mitundu yotsekera komanso mtundu wa N.
Katundu
| Kanthu | 2 inchi 4H N-mtundu | ||
| Diameter | 2 inchi (50.8mm) | ||
| Makulidwe | 350+/-25um | ||
| Kuwongolera | kuchoka pa axis 4.0˚ kulowera <1120> ± 0.5˚ | ||
| Chiyambi cha Flat Orientation | <1-100> ± 5° | ||
| Sekondale Flat Kuwongolera | 90.0˚ CW kuchokera ku Primary Flat ± 5.0˚, Si Face up | ||
| Utali Woyambira Wathyathyathya | 16 ± 2.0 | ||
| Kutalika kwa Sekondale | 8 ± 2.0 | ||
| Gulu | Gawo lazopanga (P) | Gulu la kafukufuku (R) | kalasi ya Dummy (D) |
| Kukaniza | 0.015 ~ 0.028 Ω·cm | <0.1 Ω·cm | <0.1 Ω·cm |
| Kuchuluka kwa Micropipe | ≤ 1 ma micropipe/cm² | ≤ 1 0micropipes/cm² | ≤ 30 ma micropipe/cm² |
| Kukalipa Pamwamba | Ndi nkhope ya CMP Ra <0.5nm, C Face Ra <1 nm | N/A, malo ogwiritsidwa ntchito > 75% | |
| TTV | <8 uwu | <10um | <15 um |
| Kugwada | <±8 um | <± 10um | <± 15um |
| Warp | <15 um | <20 um | <25 um |
| Ming'alu | Palibe | Kutalika kwake ≤ 3 mm | Kutalika kokwanira ≤10mm, |
| Zokanda | ≤ 3 zokanda, zochulukirapo | ≤ 5 zokanda, zochulukirapo | ≤ 10 kukwapula, kuchulukitsa |
| Zithunzi za Hex | mpaka 6 mbale, | mpaka 12 mbale, | N/A, malo ogwiritsidwa ntchito > 75% |
| Madera a Polytype | Palibe | Malo owonjezera ≤ 5% | Malo owonjezera ≤ 10% |
| Kuipitsidwa | Palibe | ||
